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Georgia Institute of Technology

DARPA 6/30/2008 | 0 (0) | 37 | 0 | 0 | English

Ferroelectrically Switched SiC Power Transistor Georgia Institute of Technology W. Alan Doolittle, alan.doolittle@ece.gatech.edu Gate Metal So ur Single Crystal Ferroelectric n-Channel So M u rc et e al Single Crystal Ferroelectric n-Channel ++++++++++++++++++++++++++ ++++++++++++++++++++++++++ So ur ce ce M -------------------------- et ...  more>>

North Carolina State University

DARPA 6/30/2008 | 0 (0) | 37 | 0 | 0 | English

Very Low Defect Density 4H-SiC Thin Films and Their Application to High Power Devices Robert Davis, North Carolina State University email: robert_davis@ncsu.edu Contract: ONR N00014-02-1-0580 1120 4H-SiC Epitaxial Films Accomplishments: • Initial films demonstrated to 81 µm • Structural, microstructural, optical and electrical film characterizatio ...  more>>

DARPA Proposer Day Presentation

DARPA 6/30/2008 | 0 (0) | 44 | 0 | 0 | English

BAA 06-30 Proposer’s Day Workshop Agenda 8:00-8:30 8:30-9:00 9:00-9:30 9:30-9:45 9:45-10:15 10:15-10:45 10:45-11:00 11:00-11:30 11:30-11:45 11:45-12:30 12:30 Registration and Continental Breakfast Welcome WBST-HPE Program Status / BAA Goals System Engineering / Integration Break, Submit Question Cards Device (PiN, MOSFET, IGBT) Status Independent S ...  more>>

Frequently Asked Questions FAQs

DARPA 6/30/2008 | 0 (0) | 35 | 0 | 0 | English

Micro-Power Sources: FAQ Q&A Session Overall Question: Are National Labs are allowed to participate in this BAA? Answer: Yes. Teams should seek the best technologies wherever they can find them. This may mean the participation of National Labs. Question: Are there any restrictions concerning foreign partners/primes/sub-contractors on this program? ...  more>>

   
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